SPI11N60CFDHKSA1N-Channel 650 V 11A (Tc) 125W (Tc) Through Hole PG-TO262-3-1
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ABRmicro #.ABR2045-SPI11N-948418
ManufacturerInfineon Technologies
MPN #.SPI11N60CFDHKSA1
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Datasheet
SPI11N60CFD(PDF)
SPI11N60CFD(PDF)
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Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSPI11N
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)64 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1200 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation125W (Tc)
RDS(on) Drain-to-Source On Resistance440mOhm @ 7A, 10V
Package Type (Mfr.)PG-TO262-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 500µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SPI11N60CFDHKSA1 is a power MOSFET manufactured by Infineon Technologies, featuring an N-channel configuration. It is designed to handle a maximum voltage of 650 V and a continuous current of 11A, making it suitable for high-power applications. This MOSFET comes in a PG-TO262-3-1 through-hole package and is capable of dissipating up to 125W at the case temperature. The device exhibits a capacitance of 1200 pF at 25 V and a low on-resistance of 440 mOhm when passing a current of 7A at 10V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.