Image is for reference only, the actual product serves as the standard.
SPD26N06S2L-35N-Channel 55 V 30A (Tc) 68W (Tc) Surface Mount PG-TO252-3-11

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-SPD26N-931374
MPN #.SPD26N06S2L-35
Estimated Lead Time-
SampleGet Free Sample
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
IGBT Module Trench Field Stop Three Phase Inverter 650 V 40 A 20 mW Chassis Mount AG-EASY2B-2
N-Channel 650 V 26A (Tc) 96W (Tc) Through Hole PG-TO247-3-41
N-Channel 650 V 59A (Tc) 189W (Tc) Through Hole PG-TO247-4-3
N-Channel 650 V 25A (Tc) 32W (Tc) Through Hole PG-TO220-FP
N-Channel 600 V 3.6A (Tc) 22W (Tc) Surface Mount PG-TO252-3-344
N-Channel 650 V 4.7A (Tc) 26W (Tc) Through Hole PG-TO251-3
N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3
Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSPD26N
Continuous Drain Current (ID) @ 25°C30A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)24 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)790 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation68W (Tc)
RDS(on) Drain-to-Source On Resistance35mOhm @ 13A, 10V
Package Type (Mfr.)PG-TO252-3-11
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 26µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SPD26N06S2L-35 is a surface mount N-channel MOSFET manufactured by Infineon Technologies. It is designed to handle a drain-source voltage of up to 55V and can carry a continuous current of 30A at a case temperature (Tc) while dissipating up to 68W. This MOSFET is housed in a PG-TO252-3-11 package and has a total gate charge of 24 nC at 10V. It features an on-state resistance of 35 mOhms when carrying 13A with a gate-source voltage of 10V, and it can be driven by gate voltages of 4.5V and 10V, providing flexibility in its operation within electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.