SPD11N10N-Channel 100 V 10.5A (Tc) 50W (Tc) Surface Mount PG-TO252-3-11
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ABRmicro #.ABR2045-SPD11N-956405
ManufacturerInfineon Technologies
MPN #.SPD11N10
Estimated Lead Time-
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Datasheet
SPD,SPU11N10(PDF)
SPD,SPU11N10(PDF)
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Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesSIPMOS®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSPD11N
Continuous Drain Current (ID) @ 25°C10.5A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)18.3 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)400 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation50W (Tc)
RDS(on) Drain-to-Source On Resistance170mOhm @ 7.8A, 10V
Package Type (Mfr.)PG-TO252-3-11
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 21µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SPD11N10 is a surface-mount N-channel MOSFET produced by Infineon Technologies, housed in a PG-TO252-3-11 package. It is designed to handle a drain-source voltage of up to 100 V and a continuous current of 10.5 A at a case temperature (Tc). The device can dissipate up to 50 W at Tc. It features a drain-source on-state resistance of 170 milliohms when operating with a current of 7.8 A and a gate-to-source voltage of 10 V. Additionally, it has a total gate charge of 18.3 nC at 10 V, enhancing its switching performance in various electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.