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SPD07N60S5N-Channel 600 V 7.3A (Tc) 83W (Tc) Surface Mount PG-TO252-3-11

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ABRmicro #.ABR2045-SPD07N-1023391
MPN #.SPD07N60S5
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In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesCoolMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSPD07N
Continuous Drain Current (ID) @ 25°C7.3A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)35 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)970 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation83W (Tc)
RDS(on) Drain-to-Source On Resistance600mOhm @ 4.6A, 10V
Package Type (Mfr.)PG-TO252-3-11
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 350µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SPD07N60S5 is a semiconductor device manufactured by Infineon Technologies, featuring an N-Channel design capable of handling voltages up to 600 V and currents of 7.3A when properly mounted and cooled. It dissipates up to 83W of power. This MOSFET is encapsulated in a PG-TO252-3-11 surface mount package, offering a compact form factor suitable for various electronic designs. The device exhibits a capacitance of 970 pF at 25 V and a resistance of 600 milliohms at a current of 4.6A and gate-to-source voltage of 10V, ensuring reliable performance in its operational range.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.