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SPD04P10PGBTMA1P-Channel 100 V 4A (Tc) 38W (Tc) Surface Mount PG-TO252-3

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ABRmicro #.ABR2045-SPD04P-1000918
MPN #.SPD04P10PGBTMA1
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In Stock: 19
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesSIPMOS®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberSPD04P10
Continuous Drain Current (ID) @ 25°C4A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)319 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation38W (Tc)
RDS(on) Drain-to-Source On Resistance1Ohm @ 2.8A, 10V
Package Type (Mfr.)PG-TO252-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 380µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SPD04P10PGBTMA1 by Infineon Technologies is a P-channel MOSFET designed for surface mount applications, housed in a compact PG-TO252-3 package. It can handle a maximum drain-source voltage of 100 V and supports a continuous drain current of up to 4 A under specified conditions. The MOSFET features a power dissipation capability of 38 W and includes gate-source voltage parameters of 10 V and ±20 V. It has a typical input capacitance of 319 pF at 25 V, making it suitable for efficient switching in various electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.