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SPB80N06S2L-05N-Channel 55 V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2

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ABRmicro #.ABR2045-SPB80N-929032
MPN #.SPB80N06S2L-05
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In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSPB80N
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)230 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7530 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance4.5mOhm @ 80A, 10V
Package Type (Mfr.)PG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SPB80N06S2L-05 by Infineon Technologies is an N-Channel MOSFET designed for efficient power management in electronic circuits. It supports a maximum voltage of 55V and can handle a continuous current of up to 80A under controlled temperature conditions (Tc). With its robust design, it achieves a remarkably low on-resistance of 4.5 mOhms at 80A and 10V, ensuring minimal power loss during operation. The device is capable of dissipating up to 300W at Tc, highlighting its suitability for high-power applications. Encased in a PG-TO263-3-2 surface mount package, the SPB80N06S2L-05 also features a total gate charge of 230 nC at 10V, facilitating efficient switching performance.
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