SPB18P06PGATMA1P-Channel 60 V 18.7A (Ta) 81.1W (Ta) Surface Mount PG-TO263-3
1:$1.0760
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ABRmicro #.ABR2045-SPB18P-1033982
ManufacturerInfineon Technologies
MPN #.SPB18P06PGATMA1
Estimated Lead Time20 Weeks
SampleGet Free Sample
Datasheet
SPB18P06P G(PDF)
SPB18P06P G(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.0760
Ext. Price$ 1.0760
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.0760$1.0760
10$0.8810$8.8080
100$0.6850$68.5310
500$0.5810$290.5940
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesSIPMOS®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberSPB18P06
Continuous Drain Current (ID) @ 25°C18.7A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)28 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)860 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation81.1W (Ta)
RDS(on) Drain-to-Source On Resistance130mOhm @ 13.2A, 10V
Package Type (Mfr.)PG-TO263-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The part SPB18P06PGATMA1, manufactured by Infineon Technologies, is a P-Channel MOSFET designed for power management applications. It operates at a maximum voltage of 60 V and can handle a continuous current of 18.7A at a case temperature (Ta). The MOSFET offers a power dissipation of up to 81.1W under the same conditions. Housed in a PG-TO263-3 surface-mount package, it exhibits a drain-source on-resistance of 130 milliohms when conducting 13.2A at a gate-source voltage of 10V. It is suited for various high-power and switching applications, delivering efficient performance due to its low on-resistance and robust design.
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