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SPB11N60S5ATMA1N-Channel 600 V 11A (Tc) 125W (Tc) Surface Mount PG-TO263-3-2

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ABRmicro #.ABR2045-SPB11N-931156
MPN #.SPB11N60S5ATMA1
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In Stock: 3
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesCoolMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberSPB11N
Continuous Drain Current (ID) @ 25°C11A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)54 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1460 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation125W (Tc)
RDS(on) Drain-to-Source On Resistance380mOhm @ 7A, 10V
Package Type (Mfr.)PG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5.5V @ 500µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SPB11N60S5ATMA1 is a power MOSFET manufactured by Infineon Technologies. This N-Channel MOSFET is designed to handle a maximum voltage of 600V and a current of up to 11A under specific conditions (Tc). Housed in a PG-TO263-3-2 surface mount package, it is optimized for efficient power management with a notable power dissipation capacity of 125W at Tc. The part features a low on-resistance of 380mOhm when conducting 7A at a gate voltage of 10V, contributing to reduced power losses. Additionally, it requires a gate threshold voltage of 5.5V to conduct 500μA, highlighting its suitability for various power switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.