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SPB03N60C3ATMA1N-Channel 650 V 3.2A (Tc) 38W (Tc) Surface Mount PG-TO263-3-2

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ABRmicro #.ABR2045-SPB03N-1017251
MPN #.SPB03N60C3ATMA1
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesCoolMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberSPB03N
Continuous Drain Current (ID) @ 25°C3.2A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)400 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation38W (Tc)
RDS(on) Drain-to-Source On Resistance1.4Ohm @ 2A, 10V
Package Type (Mfr.)PG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.9V @ 135µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The SPB03N60C3ATMA1 is an N-channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications with a PG-TO263-3-2 package. It can handle a continuous drain current of 3.2A and has a breakdown voltage of 650V. The transistor can dissipate up to 38W of power at the case temperature. It operates with a gate-source voltage of ±20V and features a gate threshold voltage of 10V, making it suitable for high-voltage electrical environments.
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