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SPA04N60C3XKSA1N-Channel 650 V 4.5A (Tc) 31W (Tc) Through Hole PG-TO220-3-31

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ABRmicro #.ABR2045-SPA04N-1011681
MPN #.SPA04N60C3XKSA1
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In Stock: 3
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Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberSPA04N
Continuous Drain Current (ID) @ 25°C4.5A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)25 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)490 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation31W (Tc)
RDS(on) Drain-to-Source On Resistance950mOhm @ 2.8A, 10V
Package Type (Mfr.)PG-TO220-3-31
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.9V @ 200µA
Package / CaseTO-220-3 Full Pack
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The part SPA04N60C3XKSA1 is a power MOSFET manufactured by Infineon Technologies, featuring an N-channel configuration. It has a drain-source voltage rating of 650 volts and can handle a continuous drain current of 4.5 amperes when mounted on a case (Tc), with a power dissipation capacity of 31 watts (Tc). The device is housed in a PG-TO220-3-31 package that facilitates through-hole mounting. Key electrical characteristics include a gate threshold voltage of 3.9 volts at 200 microamperes, a gate charge of 25 nanocoulombs at 10 volts, and an input capacitance of 490 picofarads at 25 volts. These specifications make it suitable for high-voltage switching applications in a compact form factor.
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