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IRLZ44NLPBFN-Channel 55 V 47A (Tc) 3.8W (Ta), 110W (Tc) Through Hole TO-262

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ABRmicro #.ABR2045-IRLZ44-998613
MPN #.IRLZ44NLPBF
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In Stock: 11
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Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C47A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)48 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1700 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 110W (Tc)
RDS(on) Drain-to-Source On Resistance22mOhm @ 25A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLZ44NLPBF, manufactured by Infineon Technologies, is an N-channel MOSFET designed for efficient electrical switching and amplification. It is capable of handling a drain-source voltage of up to 55 volts and a continuous current of 47 amperes when mounted on a thermal interface at standard case (Tc) conditions. It is encased in a TO-262 package suitable for through-hole mounting. The device has a power dissipation capacity of 3.8 watts when operating at junction ambient (Ta) conditions and up to 110 watts in junction case (Tc) conditions. The gate threshold voltage stands at ±16 volts, with a drive voltage requirement of 2 volts at 250 microamperes. Additionally, it features a total gate charge of 48 nanocoulombs at a gate-source voltage of 5 volts, highlighting its capability for fast switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.