IRLU3714ZN-Channel 20 V 37A (Tc) 35W (Tc) Through Hole IPAK
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ABRmicro #.ABR2045-IRLU37-999730
ManufacturerInfineon Technologies
MPN #.IRLU3714Z
Estimated Lead Time-
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Datasheet
IRLR3714Z, IRLU3714Z(PDF)
IRLR3714Z, IRLU3714Z(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C37A (Tc)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7.1 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)560 pF @ 10 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation35W (Tc)
RDS(on) Drain-to-Source On Resistance15mOhm @ 15A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.55V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Datasheets
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLU3714Z by Infineon Technologies is an N-Channel MOSFET designed for efficient electrical switching. It operates efficiently at a 20V voltage level, with a continuous current capacity of up to 37A under certain thermal conditions (Tc), and a power dissipation capability of 35W. The component is housed in a compact IPAK package suited for through-hole mounting. Key electrical characteristics include a gate charge of 7.1 nC at a gate-source voltage of 4.5V and a gate threshold voltage of 2.55V at a drain current of 250μA. Furthermore, this MOSFET can handle gate-source voltages up to ±20V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.