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IRLU3714N-Channel 20 V 36A (Tc) 47W (Tc) Through Hole IPAK

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ABRmicro #.ABR2045-IRLU37-992508
MPN #.IRLU3714
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In Stock: 9
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Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C36A (Tc)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)9.7 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)670 pF @ 10 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation47W (Tc)
RDS(on) Drain-to-Source On Resistance20mOhm @ 18A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLU3714 is an N-channel MOSFET manufactured by Infineon Technologies, designed for efficient power management. It operates with a maximum drain-source voltage of 20 V and can handle a continuous drain current of 36A when properly mounted on a suitable heat sink (Tc). The part is housed in a through-hole IPAK package, offering easy integration into various circuit designs. It boasts a power dissipation capability of 47W at the case temperature, and demonstrates a gate threshold voltage of 3V at 250µA. This MOSFET features a typical gate charge of 9.7 nC at 4.5 V, indicating its suitability for applications requiring rapid switching.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.