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IRLU2705N-Channel 55 V 28A (Tc) 68W (Tc) Through Hole IPAK

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ABRmicro #.ABR2045-IRLU27-1024358
MPN #.IRLU2705
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In Stock: 9
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C28A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)25 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)880 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation68W (Tc)
RDS(on) Drain-to-Source On Resistance40mOhm @ 17A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLU2705 is a semiconductor component manufactured by Infineon Technologies, characterized as an N-Channel MOSFET. It is designed for through-hole mounting and offers a drain-source voltage rating of 55 V with a continuous current flow capacity of 28A at controlled temperatures (Tc). The power dissipation capability stands at 68W under similar conditions. The device has an input capacitance of 880 pF at a testing condition of 25 V, with threshold voltage values of 4V and 10V, making it suitable for various electronic switching and amplification purposes requiring efficient performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.