IRLU014NPBFN-Channel 55 V 10A (Tc) 28W (Tc) Through Hole IPAK
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ABRmicro #.ABR2045-IRLU01-1037338
ManufacturerInfineon Technologies
MPN #.IRLU014NPBF
Estimated Lead Time-
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Datasheet
IRL(R,U)014NPbF(PDF)
IRL(R,U)014NPbF(PDF)
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Packaging
Tube
Shipping DateNovember 17, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C10A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7.9 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)265 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation28W (Tc)
RDS(on) Drain-to-Source On Resistance140mOhm @ 6A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLU014NPBF is an N-Channel MOSFET manufactured by Infineon Technologies, offering a drain-to-source voltage of 55 V and a continuous drain current of 10A when housed in a TO-251 (IPAK) through-hole package. It delivers a power dissipation of 28W under specified conditions. The MOSFET operates efficiently at a gate-source voltage range of 4.5V to 10V, with an on-resistance of 140 milliohms at a 6A load with a 10V gate-source voltage. Additionally, it features a total gate charge of 7.9 nanocoulombs when driven with a 5V source voltage, emphasizing its suitability for efficient switching operations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.