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IRLR8503TRLN-Channel 30 V 44A (Tc) 62W (Tc) Surface Mount TO-252AA (DPAK)

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ABRmicro #.ABR2045-IRLR85-1024349
ManufacturerInfineon Technologies
MPN #.IRLR8503TRL
Estimated Lead Time-
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DatasheetDatasheetIRLR8503(PDF)
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In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C44A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)20 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1650 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation62W (Tc)
RDS(on) Drain-to-Source On Resistance16mOhm @ 15A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IRLR8503
Design Resources
IRLR8503 Saber Model
Simulation Models
IRLR8503 Spice Model
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLR8503TRL by Infineon Technologies is an N-Channel MOSFET designed for surface mount applications with a TO-252AA (DPAK) package. It supports a maximum drain-source voltage of 30V and can handle continuous currents up to 44A at a case temperature (Tc). The device is capable of dissipating up to 62W of power under similar thermal conditions. The gate capacitance is specified at 1650 pF when the MOSFET is biased at 25V, and it exhibits a low on-state resistance of 16mOhm when conducting 15A with a gate-source voltage of 10V. The MOSFET's gate-source voltage can vary up to ±20V, providing flexibility in diverse circuit designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.