IRLR8256TRPBFN-Channel 25 V 81A (Tc) 63W (Tc) Surface Mount TO-252AA (DPAK)
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ABRmicro #.ABR2045-IRLR82-992165
ManufacturerInfineon Technologies
MPN #.IRLR8256TRPBF
Estimated Lead Time-
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Datasheet
IRL(R,U)8256PBF(PDF)
IRL(R,U)8256PBF(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIRLR8256
Continuous Drain Current (ID) @ 25°C81A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)15 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1470 pF @ 13 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation63W (Tc)
RDS(on) Drain-to-Source On Resistance5.7mOhm @ 25A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.35V @ 25µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLR8256TRPBF is a surface mount N-Channel MOSFET manufactured by Infineon Technologies, designed for efficient power management solutions. It operates at a maximum voltage of 25V and can handle a current of up to 81A while dissipating 63W of power under specified conditions (Tc). Encased in a TO-252AA (DPAK) package, this MOSFET features a low on-resistance of 5.7mOhm at a gate-source voltage of 10V and a current of 25A, making it suitable for minimizing conduction losses. Additionally, it has an input capacitance of 1470 pF at 13V, and it withstands a gate-source voltage of ±20V, ensuring reliable performance in various electronic circuits.
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