IRLR8103VTRPBFN-Channel 30 V 91A (Tc) 115W (Tc) Surface Mount TO-252AA (DPAK)
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ABRmicro #.ABR2045-IRLR81-1024361
ManufacturerInfineon Technologies
MPN #.IRLR8103VTRPBF
Estimated Lead Time-
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Datasheet
IRLR8103VPbF(PDF)
IRLR8103VPbF(PDF)
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C91A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)27 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2672 pF @ 16 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation115W (Tc)
RDS(on) Drain-to-Source On Resistance9mOhm @ 15A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLR8103VTRPBF is a surface mount N-Channel MOSFET manufactured by Infineon Technologies. It features a maximum drain-source voltage of 30V and can handle a continuous drain current of 91A when properly mounted. The device dissipates up to 115W of power at its maximum case temperature, making it suitable for high-power applications. Housed in a TO-252AA (DPAK) package, it has a gate-source voltage range of ±20V and operates with gate threshold voltages of 4.5V and 10V, achieving a gate-source voltage of 3V at a drain current of 250µA. This MOSFET is designed for efficient power switching and control in compact applications.
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