IRLR7807ZCPBFN-Channel 30 V 43A (Tc) 40W (Tc) Surface Mount TO-252AA (DPAK)
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ABRmicro #.ABR2045-IRLR78-940449
ManufacturerInfineon Technologies
MPN #.IRLR7807ZCPBF
Estimated Lead Time-
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C43A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)11 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)780 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation40W (Tc)
RDS(on) Drain-to-Source On Resistance13.8mOhm @ 15A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.25V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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info@Abrmicro.com Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLR7807ZCPBF is a semiconductor component manufactured by Infineon Technologies, featuring an N-Channel MOSFET design. It is capable of handling a continuous current of 43A at a maximum voltage of 30V. This surface mount device is encapsulated in the TO-252AA (DPAK) package, suitable for efficient heat dissipation with a power rating of 40W. The MOSFET exhibits an on-resistance of 13.8mOhm when conducting 15A at a gate voltage of 10V. It has an input capacitance of 780 pF at 15V, providing effective switching performance for various electronic applications.
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