IRLR4343TRRPBFN-Channel 55 V 26A (Tc) 79W (Tc) Surface Mount TO-252AA (DPAK)
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ABRmicro #.ABR2045-IRLR43-966408
ManufacturerInfineon Technologies
MPN #.IRLR4343TRRPBF
Estimated Lead Time-
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Datasheet
IRL(R,U)4343(-701)PbF(PDF)
IRL(R,U)4343(-701)PbF(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C26A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)42 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)740 pF @ 50 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 175°C (TJ)
Maximum Power Dissipation79W (Tc)
RDS(on) Drain-to-Source On Resistance50mOhm @ 4.7A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLR4343TRRPBF is a surface-mounted N-Channel MOSFET manufactured by Infineon Technologies. It supports a maximum voltage of 55 V and a continuous current of 26A at the case temperature, with a power dissipation capability of 79W under similar conditions. Designed in a TO-252AA (DPAK) package, it offers an efficient solution with an input capacitance of 740 pF at 50 V and a total gate charge of 42 nC at 10 V. The device achieves a drain-source voltage threshold of 1V at a drain current of 250µA.
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