IRLR4343N-Channel 55 V 26A (Tc) 79W (Tc) Surface Mount TO-252AA (DPAK)
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ABRmicro #.ABR2045-IRLR43-983485
ManufacturerInfineon Technologies
MPN #.IRLR4343
Estimated Lead Time-
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Datasheet
IRLR4343, IRLU4343/-701(PDF)
IRLR4343, IRLU4343/-701(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C26A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)42 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)740 pF @ 50 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 175°C (TJ)
Maximum Power Dissipation79W (Tc)
RDS(on) Drain-to-Source On Resistance50mOhm @ 4.7A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLR4343 by Infineon Technologies is a surface mount N-Channel MOSFET designed for efficient power management in various electronic devices. It operates with a maximum voltage of 55V and can handle a current up to 26A when properly mounted to manage heat dissipation within the 79W rating at the case temperature. Encased in the compact TO-252AA (DPAK) package, this MOSFET features a threshold voltage of 1V at 250µA, a gate charge of 42 nC at 10V, and a capacitance of 740 pF at 50V, facilitating quick switching and performance in compact electronic circuits.
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