IRLR3915PBFN-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount TO-252AA (DPAK)
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ABRmicro #.ABR2045-IRLR39-1033536
ManufacturerInfineon Technologies
MPN #.IRLR3915PBF
Estimated Lead Time-
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Datasheet
IRLR3915PbF, IRLU3915PbF(PDF)
IRLR3915PbF, IRLU3915PbF(PDF)
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Shipping DateNovember 17, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolescence Review In Progress
Continuous Drain Current (ID) @ 25°C30A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)92 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1870 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation120W (Tc)
RDS(on) Drain-to-Source On Resistance14mOhm @ 30A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLR3915PBF, manufactured by Infineon Technologies, is an N-channel MOSFET designed for surface mount applications, specifically utilizing the TO-252AA (DPAK) package. This component can handle a maximum drain-source voltage of 55 V, with a current capacity of up to 30A at 25°C case temperature. It features a low on-resistance of 14 milliohms at 30A and a gate-source voltage of 10V, allowing for efficient power management. Additionally, the MOSFET is rated for a power dissipation of up to 120W at the case temperature, making it suitable for applications requiring compact and efficient power handling.
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