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IRLR3715ZN-Channel 20 V 49A (Tc) 40W (Tc) Surface Mount TO-252AA (DPAK)

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ABRmicro #.ABR2045-IRLR37-979122
MPN #.IRLR3715Z
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In Stock: 17
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C49A (Tc)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)11 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)810 pF @ 10 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation40W (Tc)
RDS(on) Drain-to-Source On Resistance11mOhm @ 15A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.55V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLR3715Z is a surface-mount N-channel MOSFET manufactured by Infineon Technologies. This component is designed to handle a maximum voltage of 20 volts and can conduct a continuous current of up to 49 amperes when the case temperature is maintained appropriately. It has a power dissipation rating of 40 watts under similar thermal conditions. The part features a DPAK (TO-252AA) package, which facilitates efficient thermal management and compact design integration. Its input capacitance, measured at 810 pF at 10 volts, indicates its switching characteristics within electronic circuits. The device is capable of withstanding gate-source voltages up to ±20 volts, making it suitable for specific power switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.