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IRLR3705ZTRPBFN-Channel 55 V 42A (Tc) 130W (Tc) Surface Mount TO-252AA (DPAK)

1:$1.4010

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRLR37-971340
MPN #.IRLR3705ZTRPBF
Estimated Lead Time12 Weeks
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In Stock: 2924
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.4010
Ext. Price$ 1.4010
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.4010$1.4010
10$1.1680$11.6770
100$0.9300$92.9690
500$0.7860$393.1250
1000$0.6670$667.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRLR3705
Continuous Drain Current (ID) @ 25°C42A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)66 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2900 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation130W (Tc)
RDS(on) Drain-to-Source On Resistance8mOhm @ 42A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLR3705ZTRPBF is an N-Channel MOSFET transistor manufactured by Infineon Technologies, designed for surface mounting in a TO-252AA (DPAK) package. It is capable of handling up to 42A of current at a continuous drain-source voltage of 55V, and can dissipate up to 130W of power under specific conditions measured at the case (Tc). This MOSFET features a gate threshold voltage of ±16V and achieves a gate-source voltage of 3V at a drain current of 250µA. It provides efficient switching and amplification capabilities in compact electronic systems.
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