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IRLR2908TRLPBFN-Channel 80 V 30A (Tc) 120W (Tc) Surface Mount TO-252AA (DPAK)

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ABRmicro #.ABR2045-IRLR29-965491
ManufacturerInfineon Technologies
MPN #.IRLR2908TRLPBF
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetIRLR2908PbF, IRLU2908PbF(PDF)
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C30A (Tc)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)33 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1890 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation120W (Tc)
RDS(on) Drain-to-Source On Resistance28mOhm @ 23A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IRLR2908PbF, IRLU2908PbF
Simulation Models
IRLR2908PBF Spice Model
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLR2908TRLPBF is an N-channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications with a TO-252AA (DPAK) package. It operates with a maximum voltage of 80V and can handle a continuous current of 30A, delivering a power dissipation of up to 120W at the case (Tc). The MOSFET shows a threshold voltage of 2.5V at 250µA and features a low on-resistance of 28mOhm at 23A with a gate-to-source voltage of 10V, making it efficient for switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.