IRLR2905TRRPBFN-Channel 55 V 42A (Tc) 110W (Tc) Surface Mount TO-252AA (DPAK)
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ABRmicro #.ABR2045-IRLR29-993805
ManufacturerInfineon Technologies
MPN #.IRLR2905TRRPBF
Estimated Lead Time-
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Datasheet
IRLR/U2905PbF(PDF)
IRLR/U2905PbF(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolescence Review In Progress
Continuous Drain Current (ID) @ 25°C42A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)48 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1700 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Maximum Power Dissipation110W (Tc)
RDS(on) Drain-to-Source On Resistance27mOhm @ 25A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLR2905TRRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications with its TO-252AA (DPAK) package. It is capable of handling a maximum voltage of 55 V and a current of 42A, making it suitable for significant power applications up to 110 watts, as measured under specific thermal conditions (Tc). The MOSFET offers a gate-to-source voltage of ±16V and features a relatively low input capacitance of 1700 pF at 25 V, coupled with a gate charge of 48 nC at 5 V. These specifications contribute to its efficiency in switching tasks, providing a balance between power handling and performance attributes.
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