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IRLR2905TRPBFN-Channel 55 V 42A (Tc) 110W (Tc) Surface Mount TO-252AA (DPAK)

1:$1.1960

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRLR29-999844
MPN #.IRLR2905TRPBF
Estimated Lead Time10 Weeks
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In Stock: 7
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.1960
Ext. Price$ 1.1960
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.1960$1.1960
10$0.9780$9.7750
100$0.7610$76.0750
500$0.6450$322.4690
1000$0.5250$524.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRLR2905
Continuous Drain Current (ID) @ 25°C42A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)48 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1700 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation110W (Tc)
RDS(on) Drain-to-Source On Resistance27mOhm @ 25A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLR2905TRPBF is a surface-mount N-Channel MOSFET designed by Infineon Technologies with a maximum drain-source voltage rating of 55 V and a continuous drain current capacity of 42 A at an optimal case temperature. It comes in a TO-252AA (DPAK) package, providing efficient thermal management with a power dissipation capability of 110 W under specified conditions. This MOSFET features a gate-to-source voltage tolerance of ±16 V and a typical input capacitance of 1700 pF at 25 V, making it suitable for various high-performance electronic applications that require reliable switching and amplification capabilities.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.