IRLMS1503TRPBFN-Channel 30 V 3.2A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6)
1:$0.4710
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ABRmicro #.ABR2045-IRLMS1-928171
ManufacturerInfineon Technologies
MPN #.IRLMS1503TRPBF
Estimated Lead Time10 Weeks
SampleGet Free Sample
Datasheet
IRLMS1503(PDF)
IRLMS1503(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 0.4710
Ext. Price$ 0.4710
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.4710$0.4710
10$0.4010$4.0060
100$0.2780$27.8380
500$0.2180$108.9060
1000$0.1760$176.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRLMS1503
Continuous Drain Current (ID) @ 25°C3.2A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)9.6 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)210 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.7W (Ta)
RDS(on) Drain-to-Source On Resistance100mOhm @ 2.2A, 10V
Package Type (Mfr.)Micro6™(TSOP-6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / CaseSOT-23-6
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Datasheets
Design Resources
Environmental Information
PCN Packaging
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLMS1503TRPBF is a surface-mount N-Channel MOSFET from Infineon Technologies, designed to handle a maximum voltage of 30 V and a continuous current of 3.2 A (measured under specified conditions at a given ambient temperature). With a power dissipation of 1.7 W, this component is housed in a compact Micro6™ (TSOP-6) package. Its electrical characteristics include a gate charge of 9.6 nC at 10 V, a capacitance of 210 pF at 25 V, and an on-resistance of 100 mOhm at a drain current of 2.2 A and a gate-source voltage of 10 V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.