IRLML9303TRPBFP-Channel 30 V 2.3A (Ta) 1.25W (Ta) Surface Mount Micro3™/SOT-23
1:$0.3590
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ABRmicro #.ABR2045-IRLML9-992765
ManufacturerInfineon Technologies
MPN #.IRLML9303TRPBF
Estimated Lead Time20 Weeks
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Datasheet
IRLML9303TRPbF(PDF)
IRLML9303TRPbF(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.3590
Ext. Price$ 0.3590
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3590$0.3590
10$0.2570$2.5710
100$0.1300$12.9630
500$0.1150$57.3750
1000$0.0890$89.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRLML9303
Continuous Drain Current (ID) @ 25°C2.3A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)2 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)160 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.25W (Ta)
RDS(on) Drain-to-Source On Resistance165mOhm @ 2.3A, 10V
Package Type (Mfr.)Micro3™/SOT-23
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.4V @ 10µA
Package / CaseTO-236-3, SC-59, SOT-23-3
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Datasheets
Design Resources
Environmental Information
PCN Design/Specification
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLML9303TRPBF is a P-Channel MOSFET designed by Infineon Technologies, featuring a maximum voltage rating of 30V and a current rating of 2.3A at ambient temperature. It is housed in a compact Micro3™/SOT-23 surface-mount package, allowing for efficient usage in space-constrained designs. The device offers a power dissipation capacity of 1.25W and exhibits gate charge characteristics with a capacitance of 160 pF at 25 V. Suitable for operation within a gate-source voltage range of 4.5V to 10V, this MOSFET is engineered with a focus on electrical reliability and component efficiency.
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