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IRLML6401GTRPBFP-Channel 12 V 4.3A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23
1:$0.3590
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ABRmicro #.ABR2045-IRLML6-1022096
ManufacturerInfineon Technologies
MPN #.IRLML6401GTRPBF
Estimated Lead Time98 Weeks
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DatasheetIRLML6401GPbF(PDF)
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In Stock: 140
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
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Unit Price$ 0.3590
Ext. Price$ 0.3590
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* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C4.3A (Ta)
Drain-to-Source Voltage (VDS)12 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)15 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)830 pF @ 10 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.3W (Ta)
RDS(on) Drain-to-Source On Resistance50mOhm @ 4.3A, 4.5V
Package Type (Mfr.)Micro3™/SOT-23
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)950mV @ 250µA
Package / CaseTO-236-3, SC-59, SOT-23-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLML6401GTRPBF is a P-Channel MOSFET manufactured by Infineon Technologies. It is designed for surface mount applications in a Micro3™/SOT-23 package. This MOSFET can handle a maximum drain-source voltage of 12 volts and a continuous drain current of up to 4.3 amps at room temperature with a power dissipation of 1.3 watts. The device features a gate charge of 15 nanocoulombs at a gate-source voltage of 5 volts and a gate threshold voltage of approximately 950 millivolts at a drain current of 250 microamps. Its compact design along with these electrical characteristics makes it suitable for various compact electronic devices requiring efficient power control.
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