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IRLML6344TRPBFN-Channel 30 V 5A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23

1:$0.3930

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IRLML6-994212
MPN #.IRLML6344TRPBF
Estimated Lead Time20 Weeks
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In Stock: 91998
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.3930
Ext. Price$ 0.3930
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3930$0.3930
10$0.3080$3.0810
100$0.1850$18.4880
500$0.1710$85.5310
1000$0.1160$115.8130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRLML6344
Continuous Drain Current (ID) @ 25°C5A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6.8 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)650 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.3W (Ta)
RDS(on) Drain-to-Source On Resistance29mOhm @ 5A, 4.5V
Package Type (Mfr.)Micro3™/SOT-23
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.1V @ 10µA
Package / CaseTO-236-3, SC-59, SOT-23-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental Information
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLML6344TRPBF is a compact N-Channel MOSFET designed by Infineon Technologies, featuring a maximum voltage rating of 30V and continuous current capacity of 5A (Ta), packaged in a space-efficient Micro3™/SOT-23 surface-mount format. This MOSFET offers a low on-resistance of 29mOhm at 5A with a gate voltage of 4.5V, helping to minimize power loss during operation. It also exhibits a total gate charge of 6.8 nC at 4.5V, which contributes to its efficient switching performance. Additionally, the device has an input capacitance of 650 pF at 25V, making it suitable for efficient performance in various electronic designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.