IRLML6302TRP-Channel 20 V 780mA (Ta) Surface Mount Micro3™/SOT-23
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ABRmicro #.ABR2045-IRLML6-1037277
ManufacturerInfineon Technologies
MPN #.IRLML6302TR
Estimated Lead Time-
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Datasheet
IRLML6302(PDF)
IRLML6302(PDF)
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Packaging
Cut Tape (CT)
Shipping DateNovember 17, 2024
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Series-
Packaging
Cut Tape (CT)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C780mA (Ta)
Drain-to-Source Voltage (VDS)20 V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)3.6 nC @ 4.45 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)97 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
RDS(on) Drain-to-Source On Resistance600mOhm @ 610mA, 4.5V
Package Type (Mfr.)Micro3™/SOT-23
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.5V @ 250µA
Package / CaseTO-236-3, SC-59, SOT-23-3
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Datasheets
Design Resources
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLML6302TR is a P-channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications in a compact Micro3™/SOT-23 package. It supports a maximum drain-source voltage of 20 volts and can handle a continuous drain current of up to 780 mA at standard ambient temperatures. It features a low on-state resistance of 600 milliohms at a drain current of 610 mA and gate-source voltage of 4.5 volts. Additionally, the MOSFET exhibits an input capacitance of 97 pF when measured at 15 volts, aligning with typical performance standards for devices in its category.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.