IRLML2502GTRPBFN-Channel 20 V 4.2A (Ta) 1.25W (Ta) Surface Mount Micro3™/SOT-23
N/A
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ABRmicro #.ABR2045-IRLML2-910097
ManufacturerInfineon Technologies
MPN #.IRLML2502GTRPBF
Estimated Lead Time-
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Datasheet
IRLML2502GPbF(PDF)
IRLML2502GPbF(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 10, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C4.2A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)740 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.25W (Ta)
RDS(on) Drain-to-Source On Resistance45mOhm @ 4.2A, 4.5V
Package Type (Mfr.)Micro3™/SOT-23
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.2V @ 250µA
Package / CaseTO-236-3, SC-59, SOT-23-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)