IRLML0060TRPBFN-Channel 60 V 2.7A (Ta) 1.25W (Ta) Surface Mount Micro3™/SOT-23
1:$0.4360
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ABRmicro #.ABR2045-IRLML0-956714
ManufacturerInfineon Technologies
MPN #.IRLML0060TRPBF
Estimated Lead Time20 Weeks
SampleGet Free Sample
Datasheet
IRLML0060TRPBF(PDF)
IRLML0060TRPBF(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.4360
Ext. Price$ 0.4360
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.4360$0.4360
10$0.3400$3.4000
100$0.2040$20.4000
500$0.1890$94.5630
1000$0.1290$128.5630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRLML0060
Continuous Drain Current (ID) @ 25°C2.7A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)2.5 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)290 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.25W (Ta)
RDS(on) Drain-to-Source On Resistance92mOhm @ 2.7A, 10V
Package Type (Mfr.)Micro3™/SOT-23
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 25µA
Package / CaseTO-236-3, SC-59, SOT-23-3
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Datasheets
Design Resources
Environmental Information
PCN Design/Specification
PCN Packaging
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLML0060TRPBF is an N-channel MOSFET manufactured by Infineon Technologies, designed for efficient power management. Encapsulated in a compact Micro3™/SOT-23 surface mount package, this transistor supports up to 60V and can handle a continuous current of 2.7A at ambient temperature, dissipating up to 1.25W. With a low drain-source on-resistance of 92 milliohms at a gate-source voltage of 10V, it ensures minimal power loss, making it a suitable component in spaces where size and efficiency are crucial. The MOSFET operates from a gate threshold voltage of 2.5V at 25µA, offering reliable switching performance in miniature electronic devices.
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