IRLL2705PBFN-Channel 55 V 3.8A (Ta) 1W (Ta) Surface Mount SOT-223
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ABRmicro #.ABR2045-IRLL27-997049
ManufacturerInfineon Technologies
MPN #.IRLL2705PBF
Estimated Lead Time-
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Datasheet
IRLL2705PbF(PDF)
IRLL2705PbF(PDF)
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Shipping DateNovember 16, 2024
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SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolescence Review In Progress
Continuous Drain Current (ID) @ 25°C3.8A (Ta)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)48 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)870 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1W (Ta)
RDS(on) Drain-to-Source On Resistance40mOhm @ 3.8A, 10V
Package Type (Mfr.)SOT-223
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-261-4, TO-261AA
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLL2705PBF is an N-Channel MOSFET manufactured by Infineon Technologies. It features a maximum drain-source voltage of 55V and can handle a continuous current of up to 3.8A at a surface-mounted package power dissipation of 1W. Housed in a SOT-223 package, this MOSFET operates with gate-to-source threshold voltages of 4V and 10V. It exhibits an on-resistance of 40 milliohms when driven at 10V, carrying 3.8A, making it suitable for efficient switching in compact designs.
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