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IRLL2703TRPBFN-Channel 30 V 3.9A (Ta) 1W (Ta) Surface Mount SOT-223

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ABRmicro #.ABR2045-IRLL27-921565
MPN #.IRLL2703TRPBF
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In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C3.9A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)14 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)530 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1W (Ta)
RDS(on) Drain-to-Source On Resistance45mOhm @ 3.9A, 10V
Package Type (Mfr.)SOT-223
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.4V @ 250µA
Package / CaseTO-261-4, TO-261AA
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLL2703TRPBF is a surface mount N-Channel MOSFET manufactured by Infineon Technologies, designed to handle voltages up to 30 V and a continuous current of 3.9A. Encased in a SOT-223 package, this MOSFET can dissipate up to 1W of power. It features a typical input capacitance of 530 pF at 25 V, with threshold voltages of 4V and 10V, ensuring swift operation with a gate-source threshold voltage of 2.4V at 250µA. Its compact design and electrical specifications make it suitable for various electronic applications requiring efficient switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.