IRLBA1304N-Channel 40 V 185A (Tc) 300W (Tc) Through Hole SUPER-220™ (TO-273AA)
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ABRmicro #.ABR2045-IRLBA1-1000973
ManufacturerInfineon Technologies
MPN #.IRLBA1304
Estimated Lead Time-
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Datasheet
IRLBA1304(PDF)
IRLBA1304(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIRLBA130
Continuous Drain Current (ID) @ 25°C185A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)140 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7660 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance4mOhm @ 110A, 10V
Package Type (Mfr.)SUPER-220™ (TO-273AA)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / CaseTO-273AA
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Datasheets
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRLBA1304 is an N-channel power MOSFET manufactured by Infineon Technologies, designed to handle high power levels. It operates with a maximum voltage of 40 V and a continuous current of up to 185 A when properly cooled. The component is housed in a SUPER-220™ (TO-273AA) package for through-hole mounting, supporting efficient thermal management with a power dissipation capability of 300 W when the case temperature is maintained appropriately. It has a gate charge of 140 nC at 4.5 V and a typical input capacitance of 7660 pF at 25 V, making it suitable for applications requiring efficient switching performance.
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