IRL7833SPBFN-Channel 30 V 150A (Tc) 140W (Tc) Surface Mount D2PAK
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ABRmicro #.ABR2045-IRL783-996186
ManufacturerInfineon Technologies
MPN #.IRL7833SPBF
Estimated Lead Time-
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Datasheet
IRL7833(L,S)(PDF)
IRL7833(L,S)(PDF)
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Shipping DateNovember 16, 2024
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SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolescence Review In Progress
Continuous Drain Current (ID) @ 25°C150A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)47 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4170 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation140W (Tc)
RDS(on) Drain-to-Source On Resistance3.8mOhm @ 38A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.3V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRL7833SPBF by Infineon Technologies is a high-performance N-Channel MOSFET designed for efficient power management in electronic systems. It supports a maximum continuous drain current of 150A with a drain-source voltage of up to 30V, and can dissipate power up to 140W when mounted on a suitable heat-sinking surface. Housed in a compact and thermally efficient D2PAK surface mount package, it offers a low on-state resistance of 3.8mOhm at 38A and 10V, ensuring minimal power loss. Additionally, it features a gate charge of 4170 pF at 15V, contributing to its fast switching capabilities, making it suitable for high power density applications.
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