IRL530NSTRLPBFN-Channel 100 V 17A (Tc) 3.8W (Ta), 79W (Tc) Surface Mount D2PAK
1:$1.2230
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ABRmicro #.ABR2045-IRL530-1021256
ManufacturerInfineon Technologies
MPN #.IRL530NSTRLPBF
Estimated Lead Time10 Weeks
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Datasheet
IRL530NS/L(PDF)
IRL530NS/L(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.2230
Ext. Price$ 1.2230
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.2230$1.2230
10$1.0000$9.9980
100$0.7770$77.6690
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRL530
Continuous Drain Current (ID) @ 25°C17A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)34 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)800 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 79W (Tc)
RDS(on) Drain-to-Source On Resistance100mOhm @ 9A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Design Resources
Environmental Information
PCN Design/Specification
PCN Packaging
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRL530NSTRLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, designed for use in power management and switching applications. With a voltage rating of 100 V and a current rating of 17A at Tc, this surface-mount device is housed in a D2PAK package. Its on-resistance measures 100mOhm at 9A and 10V, indicating efficient conductivity with low power loss. The part exhibits a total gate charge of 34 nC at 5 V and an input capacitance of 800 pF at 25 V, ensuring it responds effectively to voltage changes. Additionally, it offers power dissipation capacities of 3.8W in free air and 79W when mounted to a heat-conductive surface.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.