IRL40SC228N-Channel 40 V 557A (Tc) 416W (Tc) Surface Mount D2PAK (7-Lead)
1:$3.4540
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ABRmicro #.ABR2045-IRL40S-953665
ManufacturerInfineon Technologies
MPN #.IRL40SC228
Estimated Lead Time12 Weeks
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Datasheet
IRL40SC228(PDF)
IRL40SC228(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 3.4540
Ext. Price$ 3.4540
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.4540$3.4540
10$2.9000$28.9960
100$2.3460$234.6000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesStrongIRFET™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIRL40SC228
Continuous Drain Current (ID) @ 25°C557A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)307 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)19680 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation416W (Tc)
RDS(on) Drain-to-Source On Resistance0.65mOhm @ 100A, 10V
Package Type (Mfr.)D2PAK (7-Lead)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.4V @ 250µA
Package / CaseTO-263-7, D2PAK (6 Leads + Tab), TO-263CB
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Datasheets
Environmental Information
PCN Design/Specification
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRL40SC228 is a robust N-channel MOSFET from Infineon Technologies, designed for surface mounting in a D2PAK 7-lead configuration. It boasts a drain-to-source voltage rating of 40 V and a substantial continuous current capacity of 557 A, making it suitable for high-power applications. The device exhibits a maximum power dissipation of 416 W under specified conditions. The MOSFET features a low threshold voltage of 2.4 V at 250 µA, supporting efficient operation at gate-to-source voltages of 4.5 V and 10 V. With its enhanced electrical characteristics, the IRL40SC228 offers reliable performance in a compact package.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.