IRL3303PBFN-Channel 30 V 38A (Tc) 68W (Tc) Through Hole TO-220AB
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ABRmicro #.ABR2045-IRL330-1018397
ManufacturerInfineon Technologies
MPN #.IRL3303PBF
Estimated Lead Time-
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Datasheet
IRL3303PbF(PDF)
IRL3303PbF(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C38A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)26 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)870 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation68W (Tc)
RDS(on) Drain-to-Source On Resistance26mOhm @ 20A, 10V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / CaseTO-220-3
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRL3303PBF by Infineon Technologies is a robust N-Channel MOSFET designed for efficient power management. It operates with a voltage of 30 V and supports a current of up to 38A when mounted properly to dissipate power. Encased in a TO-220AB package for through-hole mounting, it delivers a power dissipation capability of 68W. This component features a low on-state resistance of 26mOhm at a test current of 20A with a gate-source voltage of 10V, ensuring reduced power losses. Additionally, it has a gate charge of 26 nC when driven with 4.5 V, making it suitable for fast switching requirements, and can withstand gate-source voltages up to ±16V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.