IRL3302PBFN-Channel 20 V 39A (Tc) 57W (Tc) Through Hole TO-220AB
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ABRmicro #.ABR2045-IRL330-1007792
ManufacturerInfineon Technologies
MPN #.IRL3302PBF
Estimated Lead Time-
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Datasheet
IRL3302PbF(PDF)
IRL3302PbF(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C39A (Tc)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 7V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)31 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1300 pF @ 15 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation57W (Tc)
RDS(on) Drain-to-Source On Resistance20mOhm @ 23A, 7V
Package Type (Mfr.)TO-220AB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)700mV @ 250µA (Min)
Package / CaseTO-220-3
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRL3302PBF is an N-channel MOSFET manufactured by Infineon Technologies, designed for efficient power handling and switching capabilities. It boasts a voltage rating of 20 volts and can handle continuous currents up to 39A when properly mounted with its TO-220AB through-hole package. The part is capable of dissipating up to 57 watts of power under appropriate conditions. The MOSFET features a threshold voltage of 700mV at a gate current of 250µA, with gate voltage requirements of 4.5V to 7V for optimal performance. This component is engineered for reliability in managing moderate power levels with ease in integration due to its standard package type.
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