IRL3202SN-Channel 20 V 48A (Tc) 69W (Tc) Surface Mount D2PAK
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ABRmicro #.ABR2045-IRL320-993888
ManufacturerInfineon Technologies
MPN #.IRL3202S
Estimated Lead Time-
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Datasheet
IRL3202S(PDF)
IRL3202S(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C48A (Tc)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 7V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)43 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2000 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation69W (Tc)
RDS(on) Drain-to-Source On Resistance16mOhm @ 29A, 7V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)700mV @ 250µA (Min)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRL3202S manufactured by Infineon Technologies is an N-Channel power MOSFET designed for surface mount applications, encapsulated in a D2PAK package. It operates with a maximum voltage of 20V and can handle currents up to 48A, with a power dissipation capacity of 69W under controlled conditions at the case (Tc). The MOSFET has a total gate charge of 43 nC when driven at 4.5V, with additional electrical characteristics such as a capacitance of 2000 pF at 15V, making it suitable for efficient switching operations in various electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.