IRL2703SPBFN-Channel 30 V 24A (Tc) 45W (Tc) Surface Mount D2PAK
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ABRmicro #.ABR2045-IRL270-1035931
ManufacturerInfineon Technologies
MPN #.IRL2703SPBF
Estimated Lead Time-
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Packaging
Tube
Shipping DateNovember 17, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C24A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)15 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)450 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation45W (Tc)
RDS(on) Drain-to-Source On Resistance40mOhm @ 14A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRL2703SPBF from Infineon Technologies is a surface-mount N-Channel MOSFET designed for efficient power management. Housed in a D2PAK package, it supports a maximum drain-source voltage of 30V and can handle a continuous current of 24A when properly cooled (Tc). This component delivers a maximum power dissipation of 45W, showcasing its capability to handle significant power while maintaining thermal stability. It features a low on-resistance of 40mOhm at 14A and 10V, which ensures reduced power losses and improved efficiency. With a gate threshold voltage of 1V at 250µA and the ability to withstand gate-source voltages of up to ±16V, this MOSFET is well-suited for robust performance in various electronic systems.
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