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IRL2203NSTRRPBFN-Channel 30 V 116A (Tc) 3.8W (Ta), 180W (Tc) Surface Mount D2PAK

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ABRmicro #.ABR2045-IRL220-1017012
ManufacturerInfineon Technologies
MPN #.IRL2203NSTRRPBF
Estimated Lead Time-
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DatasheetDatasheetIRL2203NS(NL)(PDF)
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In Stock: 14
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C116A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)60 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3290 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 180W (Tc)
RDS(on) Drain-to-Source On Resistance7mOhm @ 60A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
IRL2203NS(NL)
Design Resources
IRL2203NS Saber Model
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRL2203NSTRRPBF from Infineon Technologies is a high-performance N-channel MOSFET designed for surface mount applications, using a D2PAK package. It is capable of handling a continuous current of 116A at a drain-source voltage of 30V. The device showcases a low on-resistance of 7mOhm at 60A and 10V, ensuring minimal power loss during operation. It features a gate threshold voltage of 3V with a gate-source current of 250µA. Additionally, the MOSFET has an input capacitance of 3290 pF at 25V, contributing to efficient switching performance. With a power dissipation capacity of 3.8W (Ta) and 180W (Tc), this component is designed for robust and efficient electronic implementations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.