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IRL1404ZSTRLN-Channel 40 V 75A (Tc) 230W (Tc) Surface Mount D2PAK

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ABRmicro #.ABR2045-IRL140-995001
ManufacturerInfineon Technologies
MPN #.IRL1404ZSTRL
Estimated Lead Time-
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DatasheetDatasheetIRL1404Z(ZS,ZL)(PDF)
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In Stock: 16
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)110 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5080 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation230W (Tc)
RDS(on) Drain-to-Source On Resistance3.1mOhm @ 75A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.7V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
IRL1404Z(ZS,ZL)
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRL1404ZSTRL by Infineon Technologies is a surface mount N-channel MOSFET housed in a D2PAK package. It is designed to handle a maximum drain-source voltage of 40 V and a continuous current of up to 75A when properly mounted to a heat sink. The MOSFET exhibits a low on-state resistance of 3.1 milliohms at 75A, 10V, ensuring efficient conductivity with minimal power loss. It can dissipate up to 230 watts of power when its case temperature (Tc) is properly managed. The device features a gate-source voltage tolerance of ±16V and a gate threshold voltage of 2.7V at 250µA, indicating its capability to function in various switching operations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.