IRL1404STRLPBFN-Channel 40 V 160A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK
1:$2.3760
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ABRmicro #.ABR2045-IRL140-1038732
ManufacturerInfineon Technologies
MPN #.IRL1404STRLPBF
Estimated Lead Time-
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Datasheet
IRL1404S/L(PDF)
IRL1404S/L(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 2.3760
Ext. Price$ 2.3760
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.3760$2.3760
10$1.9940$19.9430
100$1.6130$161.2880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusEnd of Life (EOL)
Base Product NumberIRL1404
Continuous Drain Current (ID) @ 25°C160A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.3V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)140 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6600 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 200W (Tc)
RDS(on) Drain-to-Source On Resistance4mOhm @ 95A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRL1404STRLPBF by Infineon Technologies is a surface-mount N-Channel MOSFET housed in a D2PAK package. Designed to handle 40V and up to 160A (Tc), it exhibits a low on-resistance of 4 milliohms at 95A with a gate-source voltage of 10V. The device supports a total power dissipation of 3.8W in free air and up to 200W when mounted on a suitable heat sink (Tc). It operates efficiently with a total gate charge of 140 nC at a gate-source voltage of 5V and has an allowable gate-source voltage range of ±20V, making it a robust choice for high-power applications.
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