IRL1404LPBFN-Channel 40 V 160A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-262
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ABRmicro #.ABR2045-IRL140-949842
ManufacturerInfineon Technologies
MPN #.IRL1404LPBF
Estimated Lead Time-
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Datasheet
IRL1404S/L(PDF)
IRL1404S/L(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C160A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.3V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)140 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6600 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 200W (Tc)
RDS(on) Drain-to-Source On Resistance4mOhm @ 95A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRL1404LPBF from Infineon Technologies is an N-Channel MOSFET designed for efficient power handling capabilities. It operates with a maximum voltage of 40V and can handle continuous currents up to 160A under certain conditions (Tc), with power dissipation rated at 3.8W (Ta) and 200W (Tc). The component is encapsulated in a TO-262 package, which is suitable for through-hole mounting. It features gate threshold voltages of 4.3V and 10V, and shows a drain-source on-state resistance when the gate-source voltage is at 3V with a drain current of 250µA. Additionally, it supports a gate to source voltage tolerance of up to ±20V, making it reliable for diverse power management applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.