IRL1104LN-Channel 40 V 104A (Tc) 2.4W (Ta), 167W (Tc) Through Hole TO-262
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ABRmicro #.ABR2045-IRL110-968264
ManufacturerInfineon Technologies
MPN #.IRL1104L
Estimated Lead Time-
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Datasheet
IRL1104S/L(PDF)
IRL1104S/L(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C104A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)68 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3445 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation2.4W (Ta), 167W (Tc)
RDS(on) Drain-to-Source On Resistance8mOhm @ 62A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Datasheets
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRL1104L by Infineon Technologies is an N-channel MOSFET designed for efficient power handling and switching. It is capable of handling a drain-to-source voltage of up to 40V and a continuous drain current of up to 104A in optimal conditions (Tc). The device features a low on-resistance of 8mOhm at a gate-source voltage of 10V and a drain current of 62A, ensuring minimal energy loss during operation. Constructed in a TO-262 package for through-hole mounting, this MOSFET supports a total power dissipation of 2.4 watts (Ta) in ambient conditions and up to 167 watts (Tc) when properly mounted on a heat-sink. It can be driven by gate-source voltages ranging between 4.5V and 10V and can tolerate gate-source voltages up to ±16V.
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