IRL1004STRRPBFN-Channel 40 V 130A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK
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ABRmicro #.ABR2045-IRL100-1023733
ManufacturerInfineon Technologies
MPN #.IRL1004STRRPBF
Estimated Lead Time-
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Datasheet
IRL1004SPbF, IRL1004LPbF(PDF)
IRL1004SPbF, IRL1004LPbF(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIRL1004
Continuous Drain Current (ID) @ 25°C130A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)100 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5330 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 200W (Tc)
RDS(on) Drain-to-Source On Resistance6.5mOhm @ 78A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IRL1004STRRPBF, manufactured by Infineon Technologies, is a surface mount N-Channel MOSFET housed in a D2PAK package. It is designed to handle a maximum continuous current of 130A at 40V, with a power dissipation capacity of 3.8W in free air (Ta) and up to 200W with proper case cooling (Tc). The device exhibits a low on-state resistance of 6.5mOhm at a gate-source voltage of 10V and a drain current of 78A, which contributes to efficient power management. Additionally, its gate charge is measured at 100 nC when driven at 4.5V, indicating responsive switching capabilities. With a gate threshold voltage range from 4.5V to 10V, this MOSFET is well-suited for use in power electronics requiring reliable and efficient load switching.
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